NTE2905 mosfet p ? ch, enhancement mode high speed switch features: dynamic dv/dt rating repetitive avalanche rated p ? channel isolated central mounting hole fast switching ease of paralleling simple drive requirements absolute maximum ratings: continuous drain current (v gs = ? 10v), i d t c = +25 c ? 12a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t c = +100 c ? 7.5a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pulsed drain current (note 1), i dm ? 48a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation (t c = +25 c), p d 150w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate linearly above 25 c 0.1.2w/ c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate ? to ? source voltage, v gs 20v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . single pulse avalanche energy (note 2), e as 790mj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . avalanche current (note 1), i ar ? 12a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . repetitive avalanche energy (note 1), e ar 15mj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak diode recovery dv/dt (note 3), dv/dt 5.0v/ns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j ? 55 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ? 55 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature (during soldering, 1.6mm from case for 10sec), t l +300 c . . . . . . . . . . . . . . . . . mounting torque (6 ? 32 or m3 screw) 10 lbf in (1.1n m) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance, junction ? to ? case, r thjc 1.15 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance, junction ? to ? ambient, r thja 62 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . typical thermal resistance, case ? to ? sink (flat, greased surface), r thcs 0.5 c/w . . . . . . . . . . . . note 1. repetitive rating; pulse width limited by maximum junction temperature. note 2. starting t j = +25 c, l = 8.2mh, r g = 25 , i as = 12a note 3. i sd 12a, di/dt 150a/ s, v dd v (br)dss , t j +150 c
electrical characteristics: (t j = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit drain ? to ? source breakdown voltage v (br)dss v gs = 0v, i d = 250 a ? 200 ? ? v breakdown voltage temp. coefficient v (br)ds s t j reference to +25 c, i d = 1ma ? -0.20 ? v/ c static drain ? to ? source on ? resistance r ds(on) v gs = 10v, i d = ? 7.2a, note 4 ? ? 0.50 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ? 2.0 ? ? 4.0 v forward transconductance g fs v ds = 50v, i d = 7.2a, note 4 4.2 ? ? s drain ? to ? source leakage current i dss v ds = 200v, v gs = 0v ? ? ? 100 a v ds = 160v, v gs = 0v, t j = +125 c ? ? ? 500 a gate ? to ? source forward leakage i gss v gs = ? 20v ? ? ? 100 na gate ? to ? source reverse leakage i gss v gs = 20v ? ? 100 na total gate charge q g i d = ? 11a, v ds = 160v, v gs = 10v ? ? 44 nc gate ? to ? source charge q gs ? ? 7.1 nc gate ? to ? drain (?miller?) charge q gd ? ? 27 nc turn ? on delay time t d(on) v dd = 100v, i d = 11a, r g = 9.1 , r d = 8.6 , note 4 ? 14 ? ns rise time t r ? 43 ? ns turn ? off delay time t d(off) ? 39 ? ns fall time t f ? 38 ? ns internal drain inductance l d between lead, .250in. (6.0) mm from package and center of die contact ? 5.0 ? nh internal source inductance l s ? 13 ? nh input capacitance c iss v gs = 0v, v ds = 25v, f = 1mhz ? 1200 ? pf output capacitance c oss ? 370 ? pf reverse transfer capaticance c rss ? 81 ? pf source ? drain ratings and characteristics: parameter symbol test conditions min typ max unit continuous source current (body diode) i s ? ? ? 12 a pulsed source current (body diode) i sm note 1 ? ? ? 48 a diode forward voltage v sd t j = +25 c, i s = 32a, v gs = 0v, note 4 ? ? ? 5.0 v reverse recovery time t rr t j = +25 c, i f = 32a, di/dt = 100a/ s, note 4 ? 250 300 ns reverse recovery charge q rr ? 2.9 3.6 c forward turn ? on time t on intrinsic turn ? on time is neglegible (turn ? on is dominated by l s +l d ) note 1. repetitive rating; pulse width limited by maximum junction temperature. note 4. pulse width ? 00 s; duty cycle 2%.
note: drain connected to metal part of mounting surface. to247 .626 (15.9) max .197 (5.0) .215 (5.45) .217 (5.5) .787 (20.0) .559 (14.2) min .143 (3.65) dia max .047 (1.2) .094 (2.4) gds .157 (4.0) see note
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